JPH0359569B2 - - Google Patents
Info
- Publication number
- JPH0359569B2 JPH0359569B2 JP56199826A JP19982681A JPH0359569B2 JP H0359569 B2 JPH0359569 B2 JP H0359569B2 JP 56199826 A JP56199826 A JP 56199826A JP 19982681 A JP19982681 A JP 19982681A JP H0359569 B2 JPH0359569 B2 JP H0359569B2
- Authority
- JP
- Japan
- Prior art keywords
- ray
- pattern
- monochromator
- transfer
- absorber pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000006096 absorbing agent Substances 0.000 description 21
- 230000004907 flux Effects 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 7
- 238000000034 method Methods 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56199826A JPS58101426A (ja) | 1981-12-11 | 1981-12-11 | X線露光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56199826A JPS58101426A (ja) | 1981-12-11 | 1981-12-11 | X線露光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58101426A JPS58101426A (ja) | 1983-06-16 |
JPH0359569B2 true JPH0359569B2 (en]) | 1991-09-11 |
Family
ID=16414280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56199826A Granted JPS58101426A (ja) | 1981-12-11 | 1981-12-11 | X線露光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58101426A (en]) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS629632A (ja) * | 1985-07-06 | 1987-01-17 | Agency Of Ind Science & Technol | 投影露光装置 |
JPS62208631A (ja) * | 1986-03-07 | 1987-09-12 | Sanyo Electric Co Ltd | 縮小型x線リソグラフイ装置 |
DE3752388T2 (de) * | 1986-07-11 | 2006-10-19 | Canon K.K. | Verkleinerndes Projektionsbelichtungssystem des Reflexionstyps für Röntgenstrahlung |
JP2688958B2 (ja) * | 1988-12-05 | 1997-12-10 | 三菱電機株式会社 | 露光装置およびその露光方法 |
-
1981
- 1981-12-11 JP JP56199826A patent/JPS58101426A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58101426A (ja) | 1983-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5677939A (en) | Illuminating apparatus | |
JP3293882B2 (ja) | 投影露光装置 | |
JP2979667B2 (ja) | 反射型のx線露光用マスク | |
US5418093A (en) | Projection exposure method and an optical mask for use in projection exposure | |
JPH0324769B2 (en]) | ||
JPH0359569B2 (en]) | ||
JP2645347B2 (ja) | 平行x線用露光マスク | |
JP3146500B2 (ja) | 露光方法、半導体素子の形成方法、及びフォトマスク | |
JPH0588355A (ja) | 反射型マスク及びそれを用いた露光装置 | |
JP2614863B2 (ja) | X線縮小投影露光装置 | |
US6707538B2 (en) | Near-field exposure system selectively applying linearly polarized exposure light to exposure mask | |
JP3371511B2 (ja) | 照明装置及び投影露光装置 | |
JP3305119B2 (ja) | X線投影露光装置 | |
JP3371512B2 (ja) | 照明装置及び露光装置 | |
JPS6362231A (ja) | X線縮小投影露光装置 | |
JP3312365B2 (ja) | 投影露光方法及び投影露光用光学マスク | |
JP2546356B2 (ja) | 位置合わせ装置 | |
JPH0385719A (ja) | 露光方法 | |
JPH06235797A (ja) | X線反射用光学素子およびそれを有するx線光学系 | |
JPH0992599A (ja) | X線露光用マスクの作製方法及び該x線露光用マスクを用いたx線露光方法、及びx線露光装置、及びこれ等を用いた半導体ディバイスの製造方法及びそれで作られた半導体ディバイス | |
JP3227842B2 (ja) | Lsiの製造方法 | |
JPH0546696B2 (en]) | ||
JPH04206709A (ja) | 露光用マスク及びx線露光装置 | |
JPH0520892B2 (en]) | ||
JPS6127548A (ja) | 非接触式露光装置 |